| PART |
Description |
Maker |
| MT88E41AE MT88E41AN MT88E41AS |
CMOS Extended Voltage Calling Number Identification Circuit (ECNIC) TELEPHONE CALLING NO IDENT CKT, PDSO20
|
Zarlink Semiconductor Inc.
Zarlink Semiconductor, Inc.
|
| MT88E43B |
Extended Voltage Calling Number Identification Circuit for CLIP, CID and CIDCW applications (Type 2)
|
Zarlink Semiconductor
|
| MT88E41 |
Extended Voltage Calling Number Identification Circuit (ECNIC)(扩展电压主叫识别电路（提供各种主叫线信息传递设备的接口 扩展电压主叫号码识别电路ECNIC）（扩展电压主叫识别电路（提供各种主叫线信息传递设备的接口））
|
Mitel Networks Corporation
Mitel Networks, Corp.
|
| K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4 |
8M X 8 EDO DRAM, 45 ns, PDSO32
8M x 8bit CMOS Dynamic RAM with Extended Data Out 8米8位的CMOS动态随机存储器的扩展数据输
(K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM48V8104C KM48V8004C KM48V8104CK-45 KM48V8104CKL- |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| GLT4160L04S-50J3 GLT4160L04S-50TC GLT4160L04SE-60T |
60ns; 4M x 4 CMOS dynamic RAM with extended data output
40ns; 4K x 4 CMOS dynamic RAM with extended data output
50ns; 4M x 4 CMOS dynamic RAM with extended data output
|
List of Unclassifed Manufacturers
G-LINK Technology
|
| HCMS-235 HCMS-2351 HCMS-2353 HCMS-235X |
HCMS-2351 · CMOS Extended Temperature Range 5x7 Alphanumeric Display
CMOS Extended Temperature Range 5 x 7 Alphanumeric Display
|
Agilent (Hewlett-Packard)
Agilent(Hewlett-Packard)
|
| SM8220P SM8221 SM8220 SM8221P SM8221S SM8220S |
CALLER NUMBER ID CIRCUIT,CMOS,DIP,16PIN,PLASTIC
From old datasheet system
Calling Number Identification Receiver IC
|
NPC[Nippon Precision Circuits Inc]
http://
|
| KM416C254D KM416V254D KM416C254DJL-5 KM416C254DJL- |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh
|
Samsung Electronic
|
| KM416V1004A-6 KM416V1004A KM416V1004A-8 KM416V1004 |
1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
